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| SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) -55 FEATURES ID (A) -60a -60a rDS(on) (W) 0.011 @ VGS = -10 V 0.0175 @ VGS = -4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS S D Automotive D Industrial D2PAK-5L T1 G D1 T2 D2 12345 D G D T1 S T2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d _ Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit -55 "20 -60a -60a -250 -60a -60a 180 200c 3.75d -55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 71748 S-05060--Rev. A, 12-Nov-01 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.75 Unit _C/W _ 1 SUM60P05-11LT Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = -250 mA VDS = VGS, IDS = -250 mA VDS = 0 V, VGS = "20 V VDS = -44 V, VGS = 0 V VDS = -44 V, VGS = 0 V, TJ = 175_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea VGS = -10 V, ID = -30 A, TJ = 125_C rDS(on) VGS = -10 V, ID = -30 A, TJ = 175_C VGS = -4.5 V, ID = -20 A Sense Diode Forward Voltage Sense Diode Forward Voltage Increase Forward Transconductancea VFD DVF gfs VDS = -25 V, IF = -250 mA From IF = -125 mA to IF = -250 mA VDS = -25 V, ID = -30 A -770 -25 50 -120 0.009 0.011 0.0175 0.022 0.0175 -830 -55 mV S W -55 -1 "100 -1 -250 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -30 V, RL = 0.6 W ID ] -60 A, VGEN = -10 V, RG = 2.5 W VDS = -30 V, VGS = -10 V, ID = -60 A VGS = 0 V, VDS = -25 V, f = 1 MHz 6450 1050 520 107 28 22 15 190 145 265 25 325 220 450 ns nC 160 pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -60 A, di/dt = 100 A/ms m IF = -60 A, VGS = 0 V -1.1 55 -1.6 0.04 -60 A -200 -1.5 110 -2.0 12 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71748 S-05060--Rev. A, 12-Nov-01 SUM60P05-11LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 25_C 150 125_C 100 250 TC = -55_C Transfer Characteristics 120 5V 80 4V 40 3V 0 0 2 4 6 8 10 50 0 0 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C 25_C 125_C 60 r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) 0.024 0.030 On-Resistance vs. Drain Current 0.018 VGS = 4.5 V 40 0.012 VGS = 10 V 0.006 20 0 0 20 40 60 80 100 120 0.000 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 Ciss C - Capacitance (pF) 6000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VGS = 30 V ID = 50 A 12 4000 8 2000 Coss Crss 0 11 22 33 44 55 4 0 0 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Document Number: 71748 S-05060--Rev. A, 12-Nov-01 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM60P05-11LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 1.6 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.2 TJ = 150_C 10 TJ = 25_C 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 70 Drain Source Breakdown vs. Junction Temperature ID = 250 mA 100 I Dav (a) IAV (A) @ TA = 150_C 10 IAV (A) @ TA = 25_C V (BR)DSS (V) 65 60 1 55 0.1 0.00001 0.0001 0.001 0.01 0.1 1 50 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) Sense Diode Forward Voltage vs. Temperature 1.0 0.01 Sense Diode Forward Voltage 0.8 ID = 125 mA ID = 250 mA 0.001 0.6 VF (V) I F (A) TJ = 150_C 0.0001 0.4 0.00001 0.2 TJ = 25_C 0.0 0 25 50 75 100 125 150 0.000001 0 0.2 0.4 0.6 VF (V) Document Number: 71748 S-05060--Rev. A, 12-Nov-01 0.8 1.0 TJ - Junction Temperature (_C) www.vishay.com 4 SUM60P05-11LT Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 Limited by rDS(on) 1000 Safe Operating Area 10 ms 100 ms I D - Drain Current (A) I D - Drain Current (A) 100 1 ms 10 ms 10 100 ms dc 1 TC = 25_C Single Pulse TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 Document Number: 71748 S-05060--Rev. A, 12-Nov-01 www.vishay.com 5 |
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